Book	PreJuSER-37689

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Untersuchung des Einflusses unterschiedlicher Dotierungen auf die elektronische Struktur von deponierten Einzelfullerenen mittels Rastertunnelspektroskopie

Wirth, I. (Corresponding author)FZJ*

2001
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich

Please use a persistent id in citations: http://hdl.handle.net/2128/20242

Report No.: Juel-3927

Abstract: In this PhD thesis the scanning tunneling microscope is used to perform topographic and spectroscopic investigations an various fullerenes (C6o, CeCCC6o , CeeC5o , CeeC44, Ce(UC36 , LaC«C44 , La(UC6o , YÜC6o, and C59N) . C60 and the endohedral doped fullerenes have been produced in a laser vaporization source and haue been mass-selected prior to soft-landing onto a highly oriented pyrolytic graphite . (C59 N)2 -powder has been evaporated in situ. After localising the deposited fullerenes onto the substrate surface using topographic measurements, spectroscopic investigations has been performed locally an the individual fullerenes . The results of these investigations demonstrated a dramatic change of the electronic structure depending an the doping and geometric structure of the fullerenes. Specifically the gap of all the endohedral doped fullerenes is smaller than the gap of pure C6o . In detail, all cerium-doped fullerenes possess semiconducting properties wich an increasing gap for decreasing cage size. No gap has been detected for LaC«C6o und YÜC6o . Thus, these fullerenes exhibit metallic behaviour. For endohedral doped fullerenes there is only a weak interaction with the substrate. The interaction effect an the electronic structure is negligible in comparsion wich the effect of endohedral doping. The gap of the heterofullerene C59N is large in comparison with the gap of the endohedral doped fullerenes but less than the gap of pure C6o . Furthermore, there is a strong interaction between the heterofullerene and the graphit substrate

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Eigenschaften (IFF-IEE)

Research Program(s):

1. Elektronische Struktur von Festkörpern, Oberflächen und Schichtsystemen (23.20.0)

Appears in the scientific report 2001

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Database coverage:

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